DMG1012T-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 630MA SOT-523
$0.34
Available to order
Reference Price (USD)
3,000+
$0.06006
6,000+
$0.05280
15,000+
$0.04554
30,000+
$0.04312
75,000+
$0.04070
150,000+
$0.03586
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG1012T-7 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMG1012T-7 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: 60.67 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 280mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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