DMG3420UQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 3
$0.11
Available to order
Reference Price (USD)
1+
$0.10811
500+
$0.1070289
1000+
$0.1059478
1500+
$0.1048667
2000+
$0.1037856
2500+
$0.1027045
Exquisite packaging
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Upgrade your designs with the DMG3420UQ-7 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMG3420UQ-7 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.47A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 434.7 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 740mW
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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