DMG5802LFX-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 24V 6.5A 6DFN
$0.27
Available to order
Reference Price (USD)
3,000+
$0.28720
6,000+
$0.26960
15,000+
$0.26080
30,000+
$0.25600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG5802LFX-7 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMG5802LFX-7 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1066.4pF @ 15V
- Power - Max: 980mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VFDFN Exposed Pad
- Supplier Device Package: W-DFN5020-6
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