PJQ4606_R1_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.83
Available to order
Reference Price (USD)
1+
$0.83000
500+
$0.8217
1000+
$0.8134
1500+
$0.8051
2000+
$0.7968
2500+
$0.7885
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ4606_R1_00001 from Panjit International Inc. is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the PJQ4606_R1_00001 provides reliable performance in demanding environments. Choose Panjit International Inc. for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
- Power - Max: 2W (Ta), 18W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: DFN3030B-8
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