PAA12400BM3
PN Junction Semiconductor
PN Junction Semiconductor
1200V HALF-BRIDGE
$882.36
Available to order
Reference Price (USD)
1+
$882.36000
500+
$873.5364
1000+
$864.7128
1500+
$855.8892
2000+
$847.0656
2500+
$838.242
Exquisite packaging
Discount
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Elevate your electronics with the PAA12400BM3 from PN Junction Semiconductor, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the PAA12400BM3 provides the reliability and efficiency you need. PN Junction Semiconductor's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 350A
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 300A, 20V
- Vgs(th) (Max) @ Id: 5V @ 100mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 1000V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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