DMHC3025LSDQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N/2P-CH 30V 8SOIC
$0.40
Available to order
Reference Price (USD)
2,500+
$0.43500
Exquisite packaging
Discount
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Discover the high-performance DMHC3025LSDQ-13 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMHC3025LSDQ-13 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A, 4.2A
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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