DMHC4035LSD-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N/2P-CH 40V 8-SOIC
$0.95
Available to order
Reference Price (USD)
2,500+
$0.43500
5,000+
$0.41575
12,500+
$0.40200
25,000+
$0.40000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the DMHC4035LSD-13 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMHC4035LSD-13 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.7A
- Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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