ZXMC3A16DN8QTA
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SO-8 T&R 0
$1.24
Available to order
Reference Price (USD)
1+
$1.23566
500+
$1.2233034
1000+
$1.2109468
1500+
$1.1985902
2000+
$1.1862336
2500+
$1.173877
Exquisite packaging
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The ZXMC3A16DN8QTA by Diodes Incorporated is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the ZXMC3A16DN8QTA offers superior functionality and longevity. Trust Diodes Incorporated to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 5.4A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 9A, 10V, 48mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V, 24.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V, 970pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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