ZXMHC10A07N8TC
Diodes Incorporated
Diodes Incorporated
MOSFET 2N/2P-CH 100V 8-SOIC
$1.33
Available to order
Reference Price (USD)
2,500+
$0.60900
5,000+
$0.58205
12,500+
$0.56280
Exquisite packaging
Discount
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Upgrade your electronic designs with the ZXMHC10A07N8TC by Diodes Incorporated, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the ZXMHC10A07N8TC ensures energy efficiency and robust performance. Diodes Incorporated's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 800mA, 680mA
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 60V
- Power - Max: 870mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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