DMHT6016LFJ-13
Diodes Incorporated
Diodes Incorporated
MOSFET 4 N-CH 14.8A VDFN5045-12
$1.74
Available to order
Reference Price (USD)
3,000+
$0.85800
6,000+
$0.83000
Exquisite packaging
Discount
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Choose the DMHT6016LFJ-13 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMHT6016LFJ-13 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-VDFN Exposed Pad
- Supplier Device Package: V-DFN5045-12
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