DMN1019USN-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 12V 9.3A SC59
$0.49
Available to order
Reference Price (USD)
10,000+
$0.13139
30,000+
$0.12173
50,000+
$0.11771
Exquisite packaging
Discount
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Upgrade your designs with the DMN1019USN-13 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMN1019USN-13 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 680mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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