DMN10H6D2LFDB-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V U-DFN2020
$0.10
Available to order
Reference Price (USD)
1+
$0.09563
500+
$0.0946737
1000+
$0.0937174
1500+
$0.0927611
2000+
$0.0918048
2500+
$0.0908485
Exquisite packaging
Discount
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Optimize your electronic projects with the DMN10H6D2LFDB-7 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMN10H6D2LFDB-7 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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