SSM6L56FE,LM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SMALL-SIGNAL MOSFET 2 IN 1 NCH +
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
Discount
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The SSM6L56FE,LM from Toshiba Semiconductor and Storage is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the SSM6L56FE,LM provides reliable performance in demanding environments. Choose Toshiba Semiconductor and Storage for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
- Power - Max: 150mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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