DMN2008LFU-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CHA 20V 14.5A DFN2030
$0.68
Available to order
Reference Price (USD)
3,000+
$0.28056
6,000+
$0.26337
15,000+
$0.25477
30,000+
$0.25008
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2008LFU-7 by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the DMN2008LFU-7 provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 14.5A
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250A
- Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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