DMN2014LHAB-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 9A 6-UDFN
$0.57
Available to order
Reference Price (USD)
3,000+
$0.21374
6,000+
$0.20140
15,000+
$0.18906
30,000+
$0.18042
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2014LHAB-7 by Diodes Incorporated is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the DMN2014LHAB-7 offers superior functionality and longevity. Trust Diodes Incorporated to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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