DMN2016LFG-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 5.2A 8UDFN
$0.72
Available to order
Reference Price (USD)
3,000+
$0.26975
6,000+
$0.25417
15,000+
$0.23860
30,000+
$0.22769
Exquisite packaging
Discount
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Optimize your electronic projects with the DMN2016LFG-7 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMN2016LFG-7 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.2A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1472pF @ 10V
- Power - Max: 770mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerUDFN
- Supplier Device Package: U-DFN3030-8
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