SH8MA4TB1
Rohm Semiconductor
Rohm Semiconductor
SH8MA4TB1 IS LOW ON-RESISTANCE A
$1.27
Available to order
Reference Price (USD)
1+
$1.27000
500+
$1.2573
1000+
$1.2446
1500+
$1.2319
2000+
$1.2192
2500+
$1.2065
Exquisite packaging
Discount
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Elevate your electronics with the SH8MA4TB1 from Rohm Semiconductor, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SH8MA4TB1 provides the reliability and efficiency you need. Rohm Semiconductor's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 8.5A (Ta)
- Rds On (Max) @ Id, Vgs: 21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V, 19.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V, 890pF @ 15V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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