DMN2025UFDB-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V-24V U-DFN2020-6
$0.16
Available to order
Reference Price (USD)
3,000+
$0.16825
Exquisite packaging
Discount
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Enhance your circuit designs with the DMN2025UFDB-7, a premium Transistors - FETs, MOSFETs - Arrays product from Diodes Incorporated. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the DMN2025UFDB-7 delivers consistent and reliable operation. Diodes Incorporated's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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