DMN2041UVT-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V TSOT26 T&R
$0.13
Available to order
Reference Price (USD)
1+
$0.12760
500+
$0.126324
1000+
$0.125048
1500+
$0.123772
2000+
$0.122496
2500+
$0.12122
Exquisite packaging
Discount
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The DMN2041UVT-13 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMN2041UVT-13 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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