SI4922BDY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 8A 8-SOIC
$1.68
Available to order
Reference Price (USD)
2,500+
$0.69798
5,000+
$0.66521
12,500+
$0.64180
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the SI4922BDY-T1-E3 from Vishay Siliconix for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SI4922BDY-T1-E3 stands out for its reliability and efficiency. Vishay Siliconix's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
Related Products
Vishay Siliconix
SQJ974EP-T1_BE3
IXYS
LKK47-06C5
Renesas Electronics America Inc
FS50KM-2-J1#E51
onsemi
FDPC8011S
Diodes Incorporated
DMTH4014LDVWQ-7
Diodes Incorporated
DMTH6015LDVW-13
Diodes Incorporated
DMN3016LDV-7
Vishay Siliconix
SISF04DN-T1-GE3
Diodes Incorporated
DMT10H032LDV-7
Rohm Semiconductor