DMT10H032LDV-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI33
$0.39
Available to order
Reference Price (USD)
1+
$0.39237
500+
$0.3884463
1000+
$0.3845226
1500+
$0.3805989
2000+
$0.3766752
2500+
$0.3727515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance DMT10H032LDV-7 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMT10H032LDV-7 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
- Power - Max: 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
Related Products
Rohm Semiconductor
SP8K2HZGTB
onsemi
2SJ664-E
IXYS
MMIX2F60N50P3
Rohm Semiconductor
BSM400D12P3G002
Microchip Technology
APTM20AM05FG
IXYS
MCB30P1200LB-TUB
onsemi
NTTFS5C478NLTAG
Panjit International Inc.
PJT7802-AU_R1_000A1
Renesas Electronics America Inc
FX6ASJ-2-T13#B00
Renesas Electronics America Inc