DMN3016LDN-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2 N-CH 9.2A VDFN3030-8
$0.19
Available to order
Reference Price (USD)
10,000+
$0.20220
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the DMN3016LDN-13 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMN3016LDN-13 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: V-DFN3030-8 (Type J)
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