DMN3016LFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 12A 6UDFN
$0.50
Available to order
Reference Price (USD)
1+
$0.50000
500+
$0.495
1000+
$0.49
1500+
$0.485
2000+
$0.48
2500+
$0.475
Exquisite packaging
Discount
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Optimize your power electronics with the DMN3016LFDF-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMN3016LFDF-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.02W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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