TSM60NB190CF C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 18A ITO220S
$7.56
Available to order
Reference Price (USD)
1+
$2.61000
10+
$2.36000
100+
$1.89650
500+
$1.47508
1,000+
$1.22221
3,000+
$1.18006
Exquisite packaging
Discount
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The TSM60NB190CF C0G from Taiwan Semiconductor Corporation redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TSM60NB190CF C0G offers the precision and reliability you need. Trust Taiwan Semiconductor Corporation to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 59.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220S
- Package / Case: TO-220-3 Full Pack
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