PJQ5462A-AU_R2_000A1
Panjit International Inc.
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
$1.17
Available to order
Reference Price (USD)
1+
$1.17000
500+
$1.1583
1000+
$1.1466
1500+
$1.1349
2000+
$1.1232
2500+
$1.1115
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJQ5462A-AU_R2_000A1 from Panjit International Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PJQ5462A-AU_R2_000A1 offers the precision and reliability you need. Trust Panjit International Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN5060-8
- Package / Case: 8-PowerVDFN
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