IAUT300N08S5N014ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 300A 8HSOF
$6.59
Available to order
Reference Price (USD)
2,000+
$3.53344
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IAUT300N08S5N014ATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IAUT300N08S5N014ATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 300A (DC)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13178 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
Related Products
Vishay Siliconix
IRL510STRLPBF
onsemi
FDT457N
onsemi
NTMFS4837NHT1G
Infineon Technologies
IRLU120NPBF
Fairchild Semiconductor
IRFS530A
Infineon Technologies
IPB80N06S208ATMA2
Vishay Siliconix
SIR112DP-T1-RE3
Infineon Technologies
SPB03N60C3
STMicroelectronics
STD7NM60N
EPC