DMN3024LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 9.78A TO252-3
$0.61
Available to order
Reference Price (USD)
2,500+
$0.22860
5,000+
$0.21540
12,500+
$0.20220
25,000+
$0.19296
Exquisite packaging
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Discover the DMN3024LK3-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMN3024LK3-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.17W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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