DMN3032LFDB-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 6.2A UDFN2020-6
$0.44
Available to order
Reference Price (USD)
3,000+
$0.17531
6,000+
$0.16574
15,000+
$0.15617
30,000+
$0.14468
75,000+
$0.13990
Exquisite packaging
Discount
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Upgrade your electronic designs with the DMN3032LFDB-7 by Diodes Incorporated, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the DMN3032LFDB-7 ensures energy efficiency and robust performance. Diodes Incorporated's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.2A
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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