DMN3035LWN-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2 N-CH 5.5A VDFN3020-8
$0.17
Available to order
Reference Price (USD)
10,000+
$0.17861
Exquisite packaging
Discount
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The DMN3035LWN-13 by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the DMN3035LWN-13 provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
- Power - Max: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: V-DFN3020-8
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