FF45MR12W1M1PB11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY1BM-2
$87.44
Available to order
Reference Price (USD)
1+
$87.44000
500+
$86.5656
1000+
$85.6912
1500+
$84.8168
2000+
$83.9424
2500+
$83.068
Exquisite packaging
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Enhance your circuit designs with the FF45MR12W1M1PB11BPSA1, a premium Transistors - FETs, MOSFETs - Arrays product from Infineon Technologies. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the FF45MR12W1M1PB11BPSA1 delivers consistent and reliable operation. Infineon Technologies's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Not For New Designs
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1.84nF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1BM
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