MSCSM170TLM11CAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP6C
$955.93
Available to order
Reference Price (USD)
1+
$955.93000
500+
$946.3707
1000+
$936.8114
1500+
$927.2521
2000+
$917.6928
2500+
$908.1335
Exquisite packaging
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Discover the high-performance MSCSM170TLM11CAG from Microchip Technology, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the MSCSM170TLM11CAG delivers unmatched performance. Trust Microchip Technology's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Three Level Inverter)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
- Power - Max: 1114W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6C
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