DMN3060LVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET 25V~30V TSOT26
$0.15
Available to order
Reference Price (USD)
1+
$0.14829
500+
$0.1468071
1000+
$0.1453242
1500+
$0.1438413
2000+
$0.1423584
2500+
$0.1408755
Exquisite packaging
Discount
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Elevate your electronics with the DMN3060LVT-7 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMN3060LVT-7 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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