DMN3200U-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 2.2A SOT23-3
$0.50
Available to order
Reference Price (USD)
3,000+
$0.15113
6,000+
$0.14288
15,000+
$0.13463
30,000+
$0.12473
75,000+
$0.12060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the DMN3200U-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMN3200U-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 650mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Alpha & Omega Semiconductor Inc.
AOD538
Vishay Siliconix
SIHB21N60EF-GE3
Infineon Technologies
BSZ034N04LSATMA1
Infineon Technologies
IRFH8311TRPBF
Renesas Electronics America Inc
2SK3570-ZK-E1-AZ
Toshiba Semiconductor and Storage
SSM3K344R,LF
Microchip Technology
APT6038BFLLG
Rectron USA
RM10N100LD
onsemi
FCPF380N60E
onsemi