DMN33D9LV-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT563 T&R
$0.11
Available to order
Reference Price (USD)
1+
$0.11187
500+
$0.1107513
1000+
$0.1096326
1500+
$0.1085139
2000+
$0.1073952
2500+
$0.1062765
Exquisite packaging
Discount
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Optimize your electronic projects with the DMN33D9LV-7 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMN33D9LV-7 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
- Power - Max: 430mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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