DMN53D0LDW-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 50V 0.36A SOT363
$0.36
Available to order
Reference Price (USD)
3,000+
$0.07862
6,000+
$0.06912
15,000+
$0.05962
30,000+
$0.05645
75,000+
$0.05328
150,000+
$0.04694
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance DMN53D0LDW-7 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMN53D0LDW-7 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 360mA
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
- Power - Max: 310mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Panjit International Inc.
PJQ5846-AU_R2_000A1
onsemi
NTUD3169CZT5G
onsemi
FDMB3900AN
Microchip Technology
MSCSM120AM50CT1AG
onsemi
NTLJD4116NT1G
Advanced Linear Devices Inc.
ALD210800PCL
Rohm Semiconductor
UT6K3TCR
Diodes Incorporated
DMC2053UFDBQ-13
Infineon Technologies
IPG20N04S4L11AATMA1
Nexperia USA Inc.