DMN65D8LQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 310MA SOT23
$0.03
Available to order
Reference Price (USD)
10,000+
$0.03209
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN65D8LQ-13 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMN65D8LQ-13 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IRFR1010ZTRPBF
Infineon Technologies
IMZA65R048M1HXKSA1
Diodes Incorporated
DMNH6042SK3Q-13
Infineon Technologies
BSC021N08NS5ATMA1
IXYS
IXTH24N50L
Infineon Technologies
IPB180N04S4LH0ATMA1
Infineon Technologies
IPA65R190C7XKSA1
Infineon Technologies
IPLK80R600P7ATMA1
Infineon Technologies
IRFZ44NPBF
onsemi