IPA65R190C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 8A TO220-FP
$3.98
Available to order
Reference Price (USD)
1+
$3.35000
10+
$3.02900
100+
$2.43440
500+
$1.89344
1,000+
$1.56884
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPA65R190C7XKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPA65R190C7XKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 290µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IPLK80R600P7ATMA1
Infineon Technologies
IRFZ44NPBF
onsemi
FDP52N20
Nexperia USA Inc.
BUK9Y4R8-60E,115
onsemi
FCH023N65S3-F155
onsemi
FCMT125N65S3
Panjit International Inc.
PJMF280N65E1_T0_00001
Renesas Electronics America Inc
NP88N055KHE-E1-AY
Vishay Siliconix
SQJ140ELP-T1_GE3
onsemi