DMNH6065SPDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V-60V POWERDI506
$0.48
Available to order
Reference Price (USD)
1+
$0.48110
500+
$0.476289
1000+
$0.471478
1500+
$0.466667
2000+
$0.461856
2500+
$0.457045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the DMNH6065SPDWQ-13 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMNH6065SPDWQ-13 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
- Power - Max: 2.4W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type R)
Related Products
Microchip Technology
MSCSM120TLM50C3AG
Diodes Incorporated
DMC2990UDJQ-7B
Renesas
UPA2793GR(0)-E1-AZ
Microchip Technology
APTM50HM75SCTG
Comchip Technology
CMSBN6601-HF
Microchip Technology
MSCSM170AM029CT6LIAG
Panjit International Inc.
PJT7601_R1_00001
Renesas Electronics America Inc
UPA2324T1P-E1-A
Vishay Siliconix
SQJ910AEP-T2_GE3
onsemi