DMP1005UFDF-13
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 12V 26A 6UDFN
$0.18
Available to order
Reference Price (USD)
1+
$0.17640
500+
$0.174636
1000+
$0.172872
1500+
$0.171108
2000+
$0.169344
2500+
$0.16758
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the DMP1005UFDF-13 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMP1005UFDF-13 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
onsemi
NVMFS5C677NLWFT1G
NXP USA Inc.
PMPB20UN,115
Fairchild Semiconductor
FQB5N40TM
onsemi
FDBL86066-F085
Rohm Semiconductor
R6524ENJTL
Toshiba Semiconductor and Storage
TK12A55D(STA4,Q,M)
Microchip Technology
APT66M60B2
Nexperia USA Inc.
BUK9M9R1-40EX
Vishay Siliconix
IRFP340PBF
Vishay Siliconix