DMP65H20D0HSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 501V~650V SO-8 T&R
$0.41
Available to order
Reference Price (USD)
1+
$0.41195
500+
$0.4078305
1000+
$0.403711
1500+
$0.3995915
2000+
$0.395472
2500+
$0.3913525
Exquisite packaging
Discount
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Upgrade your designs with the DMP65H20D0HSS-13 by Diodes Incorporated, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the DMP65H20D0HSS-13 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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