DMPH4011SK3Q-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V TO252 T&R
$0.62
Available to order
Reference Price (USD)
1+
$0.62262
500+
$0.6163938
1000+
$0.6101676
1500+
$0.6039414
2000+
$0.5977152
2500+
$0.591489
Exquisite packaging
Discount
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Enhance your electronic projects with the DMPH4011SK3Q-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMPH4011SK3Q-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4497 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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