DMT10H017LPD-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V-100V POWERDI50
$0.76
Available to order
Reference Price (USD)
2,500+
$0.82128
Exquisite packaging
Discount
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Elevate your electronics with the DMT10H017LPD-13 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMT10H017LPD-13 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
- Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
- Power - Max: 2.2W (Ta), 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8
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