DMT10H072LFV-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V PWRDI3333
$0.24
Available to order
Reference Price (USD)
1+
$0.24388
500+
$0.2414412
1000+
$0.2390024
1500+
$0.2365636
2000+
$0.2341248
2500+
$0.231686
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMT10H072LFV-13 single MOSFET from Diodes Incorporated is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the DMT10H072LFV-13 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
Related Products
Rectron USA
RM35N30DF
Toshiba Semiconductor and Storage
2SK209-Y(TE85L,F)
Infineon Technologies
IRFR825TRPBF
onsemi
NTHS4111PT1G
NXP USA Inc.
BUK6209-30C,118
Toshiba Semiconductor and Storage
SSM3J144TU,LF
Infineon Technologies
IRFS4620TRLPBF
Vishay Siliconix
SQ4850EY-T1_GE3
Infineon Technologies
IRFR2405TRLPBF
Infineon Technologies