DMT12H090LFDF4-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 115V 3.4A 6DFN
$0.37
Available to order
Reference Price (USD)
1+
$0.37230
500+
$0.368577
1000+
$0.364854
1500+
$0.361131
2000+
$0.357408
2500+
$0.353685
Exquisite packaging
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The DMT12H090LFDF4-13 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 115 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2020-6
- Package / Case: 6-PowerXDFN
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Diodes Incorporated