DMT3006LFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 14.1A 6UDFN
$0.56
Available to order
Reference Price (USD)
3,000+
$0.18755
6,000+
$0.17545
15,000+
$0.16335
30,000+
$0.15488
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the DMT3006LFDF-7 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMT3006LFDF-7 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Infineon Technologies
BSC080P03LSGAUMA1
Rohm Semiconductor
R6004JND3TL1
Infineon Technologies
IPI80N04S204AKSA2
Infineon Technologies
IPW50R399CPFKSA1
UnitedSiC
UF3SC065030B7S
Microchip Technology
VN4012L-G
onsemi
NTD5N50
Diodes Incorporated
DMPH4015SK3Q-13
onsemi
NTD4904NT4G
STMicroelectronics