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DMT6010SCT

Diodes Incorporated
DMT6010SCT Preview
Diodes Incorporated
MOSFET N-CH 60V 98A TO220-3
$1.52
Available to order
Reference Price (USD)
1+
$1.54000
50+
$1.23200
100+
$1.07800
500+
$0.83600
1,000+
$0.66000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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