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DMT6017LFDF-13

Diodes Incorporated
DMT6017LFDF-13 Preview
Diodes Incorporated
MOSFET N-CH 65V 8.1A 6UDFN
$0.18
Available to order
Reference Price (USD)
1+
$0.17550
500+
$0.173745
1000+
$0.17199
1500+
$0.170235
2000+
$0.16848
2500+
$0.166725
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 65 V
  • Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 891 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad

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