DMT6018LDR-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V 60V V-DFN3030-
$0.41
Available to order
Reference Price (USD)
3,000+
$0.27446
Exquisite packaging
Discount
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The DMT6018LDR-7 from Diodes Incorporated is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the DMT6018LDR-7 provides reliable performance in demanding environments. Choose Diodes Incorporated for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 869pF @ 30V
- Power - Max: 1.9W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: V-DFN3030-8
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