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DMTH10H010LCT

Diodes Incorporated
DMTH10H010LCT Preview
Diodes Incorporated
MOSFET N-CH 100V 108A TO220AB
$1.70
Available to order
Reference Price (USD)
1+
$1.81000
50+
$1.47500
100+
$1.33750
500+
$1.06250
1,000+
$0.89750
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 166W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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