DMTH10H2M5STLWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V,POWERDI10
$4.90
Available to order
Reference Price (USD)
1+
$4.90000
500+
$4.851
1000+
$4.802
1500+
$4.753
2000+
$4.704
2500+
$4.655
Exquisite packaging
Discount
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Optimize your power electronics with the DMTH10H2M5STLWQ-13 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMTH10H2M5STLWQ-13 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
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